Method of forming diffusion region of semiconductor device by so

Details Method of forming diffusion region of semiconductor device by so Method of forming diffusion region of semiconductor device by so

1993-02-19

1994-10-04

Thomas, Tom

Fishing, trapping, and vermin destroying

437133, 437167, 437976, H01L 21225

Patent

active

053526287

ABSTRACT:
An impurity is diffused into semiconductor epitaxial layers of a semiconductor device from a solid phase diffusion source through an additional thin film layer disposed on the epitaxial layers of the structure. After the diffusion, the thin film layer is removed. The material of the additional thin film layer has physical properties approximating those of the epitaxial layers. Accordingly, no crystallographic defects such as dislocations are introduced into the epitaxial layers by heat treatment, and, accordingly, the resulting device has reduced leakage current.

REFERENCES:
patent: 4957879 (1990-09-01), Omura et al.
patent: 4980313 (1990-12-01), Takahashi
patent: 5023199 (1991-06-01), Murakami et al.
patent: 5089437 (1992-02-01), Shima et al.
Ogawa et al, "Pin Photodiode Fabricated By Flash Annealing of ZnO/SiO.sub.2 Film," Collections of Manuscipts for Lectures at the 46th Conference of the Japan Society of Applied Physics, 1985, p. 167, and translation.

Affiliated with

Also associated with

Rating

Method of forming diffusion region of semiconductor device by so does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming diffusion region of semiconductor device by so, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming diffusion region of semiconductor device by so will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-581042