Method of manufacturing semiconductor substrate

Details Method of manufacturing semiconductor substrate Method of manufacturing semiconductor substrate

1991-11-29

1994-10-04

Thomas, Tom

Fishing, trapping, and vermin destroying

437 62, 437 68, 437 64, 437974, 148DIG50, H01L 2176

Patent

active

053526252

ABSTRACT:
In manufacturing a semiconductor substrate having a dielectric isolation structure, a dielectric film is formed at a semiconductor layer formed by epitaxial growth. Grooves for carrying out dielectric isolation to deposit filler thereon thereafter are used to polish the deposited filler. The polishing condition is obeyed where polishing rate ratio of the filler to the dielectric film is one fifth or less. Thus, an active semiconductor layer in which where elements are to be formed can be provided with good productivity, state where the flatness thereof is good and the layer thickness is uniformly and precisely controlled.

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Research Disclosure No. 306, 1989, Havant GB, p. 743 `Method For Producing Planarized.
Y. Ohta et al. "Dielectrically Isolated Intelligent Power Switch", IEEE 1987 Custom Integrated Circuits Conference pp. 443-446.
J. Ohura et al. "Dielectrically Isolated Photodiode Array by Silicon Wafer Direct Bonding", IEEE Electron Device Letter, vol. EDL-8 n10. '87 p. 454.
T. Hamaguchi et al. "Novel LSI/SOI Wafer Fabrication Using Device Layer Transfer Technique", IEDM 85 pp. 688-691.
Research Disclosure No. 306, 1989, Havant GB, p. 743 `Method For Producing Planarized.

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