Semiconductor switching device

Details Semiconductor switching device Semiconductor switching device

1986-12-05

1991-01-15

James, Andrew J.

357 38, 357 41, 357 45, 357 55, 357 58, H01L 2980, H01L 2974, H01L 2702, H01L 2710

Patent

active

049857380

ABSTRACT:
A semiconductor thyristor of the Static Induction type having a split-gate structure, e.g., driving gates and non-driving gates, for controlling cathode-anode current flow. The split-gate structure comprises a plurality of primary gates formed in recesses of the channel region which respond to an external control signal for providing primary current control, and a plurality of secondary non-driving gates which are influenced by electric fields in the channel region extant during thyristor operation for providing secondary current control. In operation, the driving and non-driving gates coact so that the non-driving gates, having an induced potential lower than the potential applied to the driving gates, absorb charge carriers injected in the channel during thyristor operation. The relative disposition of the non-driving gates and the anode, as well as the respective doping concentrations of the anode and channel regions, enable the non-driving gates to absorb a substantial portion of charge carriers injected from the anode into the channel during high-power operation. Fast turn-on and turn-off is achieved by exclusion of the non-driving gate capacitance in the driving gate circuit.

REFERENCES:
patent: 4284997 (1981-08-01), Nishizawa
T. Chiu, "Planar Junction-Gate Field Effect Trans.", IBM Tech. Disc. Bull., vol. 14, #1, Jun. 1976, p. 297.
J. Nishizawa et al., "Characteristics of New Thyristors", Jap. J.A.P., vol. 16 (1977), Suppl. 16-1, pp. 541, 542.

Affiliated with

Also associated with

Rating

Semiconductor switching device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor switching device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor switching device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-57990