Semiconductor memory device and a method for producing the same

Details Semiconductor memory device and a method for producing the same Semiconductor memory device and a method for producing the same

1991-06-28

1994-03-01

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 43, 437 48, 257278, 257296, 257315, 257312, 257321, H01L 27108

Patent

active

052907252

ABSTRACT:
A method for producing a semiconductor memory device including a volatile memory element, a non-volatile memory element, and a driver in combination on a silicon conductive substrate is provided. The volatile memory element is a DRAM and is disposed in and on a reverse-conductive well. A charge storage electrode layer of the DRAM is partly disposed on a transfer gate electrode layer with an insulating film sandwiched therebetween. The non-volatile memory element is a mask read-only memory and/or a programmable read-only memory.

REFERENCES:
patent: 4672580 (1987-06-01), Yau et al.
patent: 4701776 (1987-10-01), Perlegos et al.
patent: 4851361 (1989-07-01), Schumann et al.
patent: 5140551 (1992-08-01), Chiu
patent: 5169729 (1992-12-01), Katoh et al.
patent: 5183773 (1993-02-01), Miyata
Article from C.I.C.C. Resumes entitled "A 72K CMOS Channelless Gate Array with Embedded 1Mbit Dynamic RAM" by Sawada et al., 1988; pp. 20.3.1 to 20.3.4.

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