Method of making dielectrically isolated metal base transistors

Details Method of making dielectrically isolated metal base transistors Method of making dielectrically isolated metal base transistors

1991-12-31

1994-03-01

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 62, 437 31, 437228, 148DIG12, H01L 21265

Patent

active

052907155

ABSTRACT:
The invention is directed to method for making a dielectrically isolated metal base transistors and permeable base transistors. The first step is the production of a silicon/metal silicide/silicon heterostructure. Thereafter the surface of the heterostructure is oxidized so as to provide a bonding surface. A second silicon substrate has its surface oxidized and is bonded to the heterostructure. The surface of the heterostructure is then etched back so as to expose individual transistors which are disposed on the oxidized surface of the second substrate. With suitable processing of the metal silicide layer it may act as the base region for a metal base or permeable base transistor.

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