Process for forming crystalline semiconductor film

Fishing – trapping – and vermin destroying

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437233, 437108, 156603, H01L 2120

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052907120

ABSTRACT:
A process for forming a crystalline semiconductor film by crystallization through solid phase growth of an amorphous semiconductor film on a base material comprises implanting ions of an element constituting the amorphous semiconductor film into the amorphous semiconductor film except a fine region therein, then heat-treating the amorphous semiconductor film at a temperature not higher than the melting point of the amorphous semiconductor film, thereby generating a crystal nucleus in the fine region, and making a crystal grow at the crystal nucleus as growth point.

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Kwizera, P., "Solid Phase Epitaxial . . . Implantation", Applied Physics Letters 41(4) Aug. 1982 pp. 379-381.
T. Noguchi, et al., Materials Research Society Symposium Proceedings, vol. 106, Polysilicon Films and Interfaces, pp. 293-304 (Elsevier Science Publishing, New York 1988).
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Patent Abstracts of Japan, vol. 8, No. 4 (E-220) [1441], Jan. 10, 1984.

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