Photodiode with improved photoresponse behavior

Details Photodiode with improved photoresponse behavior Photodiode with improved photoresponse behavior

1996-10-21

1998-05-05

Tran, Minh-Loan

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Charge transfer device

257450, 257461, 257463, H01L 3106

Patent

active

057478406

ABSTRACT:
The quantum efficiency of a photodiode is substantially increased by forming the photodiode on a heavily-doped layer of semiconductor material which, in turn, is formed on a semiconductor substrate. The heavily-doped layer of semiconductor material tends to repel information carriers in the photodiode from being lost to the substrate, and prevents noise carriers from the substrate from diffusing up into the photodiode. In addition, the red and blue photoresponses are balanced by adjusting the depth of the photodiode.

REFERENCES:
Aw, C. H. et al., "FA 11.2: A 128.times.128-Pixel Standard-CMOS Image Sensor with Electronic Shutter," 1996 IEEE International Solid-State Circuits Conference, pp. 180-181; pp. 140-141 & p. 397, 1996.
Ando, F. et al., "A 250,000-Pixel Image Sensor with FET Amplification at Each Pixel for High-Speed Television Cameras," IEEE International Solid-State Circuits Conference, Feb. 16, 1990, pp. 212-213.

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