Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Patent
1996-10-21
1998-05-05
Berman, Jack I.
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
250251, 118723FI, 118726, H01J 37317
Patent
active
057478180
ABSTRACT:
Apparatus for supplying a jet of chemical vapor at a substantially constant rate comprises a crucible for containing a quantity of chemical, a hollow needle, a flow path from the crucible to the hollow needle, a Peltier element in thermal communication with the crucible, and a temperature control circuit responsive to temperature in the crucible for powering the Peltier element so as to maintain temperature of the crucible substantially constant. The temperature control circuit powers the Peltier element so as to maintain temperature of the crucible below (or above) ambient temperature. The apparatus is useful in a system for modifying an integrated circuit specimen which further comprises a vacuum chamber and an ion-optical column for directing a focused ion beam at an integrated circuit specimen within the vacuum chamber. Control of vapor pressure, and thus flow rate, offers improved control over FIB processing of integrated circuit specimens.
REFERENCES:
patent: 4930439 (1990-06-01), Sato et al.
patent: 5086230 (1992-02-01), Adachi et al.
patent: 5104684 (1992-04-01), Tao et al.
patent: 5140164 (1992-08-01), Talbot et al.
patent: 5591970 (1997-01-01), Komano et al.
Berman Jack I.
Riter Bruce D.
Schlumberger Technologies Inc.
LandOfFree
Thermoelectric cooling in gas-assisted FIB system does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Thermoelectric cooling in gas-assisted FIB system, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Thermoelectric cooling in gas-assisted FIB system will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-57048