PECVD method of depositing fluorine doped oxide using a fluorine

Details PECVD method of depositing fluorine doped oxide using a fluorine PECVD method of depositing fluorine doped oxide using a fluorine

1994-09-30

1996-10-08

Breneman, R. Bruce

Fishing, trapping, and vermin destroying

H01L 21316

Patent

active

055631053

ABSTRACT:
Fluorine-doped oxide is formed that is resistant to water absorption by the use of two sources of silicon, one being the fluorine precursor and the other being available to react with excess fluorine from the fluorine precursor, thereby reducing the number of fluorine radicals in the layer; the fluorine precursor containing a glass-forming element that combines with the other glass constituents to carry into the gas a diatomic radical containing one atom of fluorine and one atom of the glass-forming element.

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