High-frequency circuit having a loaded field-effect transistor

Details High-frequency circuit having a loaded field-effect transistor High-frequency circuit having a loaded field-effect transistor

1988-12-14

1991-01-15

Callahan, Timothy P.

Electrical transmission or interconnection systems

Personnel safety or limit control features

Interlock

307491, 330286, 330277, 330 54, 357 41, 331117FE, H03K 3353, H03B 518, H01L 2980

Patent

active

049856421

ABSTRACT:
A high-frequency circuit includes a field-effect transistor having a gate electrode for receiving a high-frequency input signal, a source electrode and a drain electrode. Substantial improvements in both maximum gain and high-frequency performance are achieved by providing an input or output terminal at one end of each electrode, and terminating at least one of the electrodes with an appropriate impedance at its second end.

REFERENCES:
patent: 4011518 (1977-03-01), Irvine et al.
patent: 4486719 (1984-12-01), Ayasli
patent: 4783849 (1988-11-01), Muterspaugh
patent: 4853649 (1989-08-01), Seino et al.

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