Insulated gate field effect transistor

Details Insulated gate field effect transistor Insulated gate field effect transistor

1976-08-03

1978-05-23

Miller, Jr., Stanley D.

357 89, H01L 2978

Patent

active

040914054

ABSTRACT:
An insulated gate field effect transistor wherein a source region and drain region having the conduction type opposite to that of the semiconductor substrate of one conduction type being formed in said semiconductor substrate at a distance, the surface of said semiconductor substrate in the channel region between said source region and drain region being provided with an insulated gate electrode, first and second high conduction regions having the same conduction type as that of said semiconductor and higher conductivity being formed to conform to predetermined longitudinal length along the channel and arranged so as to engage with the entire area of the source region and drain region or engage with the portion of the source region and drain region in the channel region and characterized by reduced threshold voltage drop and elimination of dependency of threshold voltage on the processing precision as a result of shortened channel.

REFERENCES:
patent: 3868187 (1975-02-01), Masuoka
patent: 3891190 (1975-06-01), Vadasz
patent: 3936857 (1976-02-01), Ota

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