Variable rate semiconductor deposition process

Details Variable rate semiconductor deposition process Variable rate semiconductor deposition process

1982-10-26

1985-01-22

Kittle, John E.

Coating processes

Electrical product produced

Condenser or capacitor

427 90, 427 91, 4272557, B05D 512

Patent

active

044952210

ABSTRACT:
A layer of a conductive material consisting of aluminum alone or in combination with a small percentage of copper and/or silicon is formed on a semiconductor surface in a two-step deposition process in such a manner as to largely avoid serious continuity defects in the layer.

REFERENCES:
patent: 3934059 (1976-01-01), Polinsky

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