Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Responsive to electromagnetic radiation
Patent
1997-12-23
2000-01-18
Chang, Joni
Semiconductor device manufacturing: process
Making device or circuit responsive to nonelectrical signal
Responsive to electromagnetic radiation
438 93, H01L 2100
Patent
active
060157216
ABSTRACT:
A method of manufacturing an avalanche photodiode capable of effectively preventing edge breakdown is disclosed. First, so as to manufacture an avalanche photodiode an absorption layer, a grading layer, a charge sheet layer of a first conductivity type and a multiplying layer are formed in sequence on a compound semiconductor substrate of the first conductivity type. Then, a concave portion is formed within multiplying layer at the central portion thereof. A first diffusion layer of the second conductivity type is formed to a first thickness within the multiplying layer so as to surround the concave portion. Next, a second diffusion layer of second conductivity type is formed within the multiplying layer to a second depth deeper than the first depth by extending the first diffusion layer and simultaneously a floating guard-ring, separated from the second diffusion with a selected distance is formed within the multiplying layer. A passivation layer on the multiplying layer is formed such that the second diffusion layer including the concave portion and an adjacent portion thereto is exposed. An ohmic contact layer of the second conductivity type making an ohmic contact with a selected portion of the second diffusion layer.
REFERENCES:
patent: 5057891 (1991-10-01), Torikai
patent: 5343055 (1994-08-01), Davis et al.
patent: 5596186 (1997-01-01), Kobayashi
patent: 5843804 (1998-12-01), Su et al.
Chang Joni
Hyundai Electronics Industries Co,. Ltd.
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