Production of silicon carbide

Details Production of silicon carbide Production of silicon carbide

1983-06-02

1985-08-20

Kaplan, G. L.

Chemistry of inorganic compounds

Silicon or compound thereof

Binary compound

C01B 3136

Patent

active

045363790

ABSTRACT:
A process for the manufacture of silicon carbide crystals and whiskers comprises reacting at a temperature between 1,400.degree. C. and 2,100.degree. C. and in the presence of an inert gas, a material including as essential ingredients carbon, alumina, iron oxide, potassium oxide, and silica in an amount to provide a carbon to silicon ratio of from about 0.84:1 to about 2.17:1.

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June-Gunn Lee et al., Am. Ceram. Soc. Bull. (USA), vol. 54, No. 2, pp. 195-198, (1975).

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