Pin amorphous silicon photovoltaic element with counter-doped in

Details Pin amorphous silicon photovoltaic element with counter-doped in Pin amorphous silicon photovoltaic element with counter-doped in

1994-10-14

1996-11-12

Larkins, William D.

Batteries: thermoelectric and photoelectric

Photoelectric

Cells

257 53, 257 55, H01L 310288, H01L 310392, H01L 31075

Patent

active

055736017

ABSTRACT:
A pin type photovoltaic element having an electroconductive substrate and a cell stacked with an n-type semiconductor layer, an i-type semiconductor layer and a p-type semiconductor, all composed of a non-single crystal material containing silicon, and featuring an intermediate layer. The intermediate layer composed of non-single material containing silicon atoms as the matrix and atoms of elements belonging to Group IIIA and VA of the periodic table is between the i-type conductor layer and the p-type conductor layer or the n-type semiconductor layer. The intermediate layer may contain carbon atoms and/or germanium atoms.

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Y. Tawada et al., "Optimizations of the Film Deposition Parameters for the Hydrogenated Amorphous Silicon Solar Cell," Proceedings of the 2nd Photovoltaic Science and Engineering Conference in Japan, Tokyo, Dec. 2-4, 1980, Japanese Journal of Applied Physics, vol. 20, 1981 pp. 219-225.

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