Method of forming a metal interconnect structure for integrated

Details Method of forming a metal interconnect structure for integrated Method of forming a metal interconnect structure for integrated

1978-12-04

1979-06-19

Tufariello, T. M.

Chemistry: electrical and wave energy

Processes and products

357 71, C25D 502, H01L 2348

Patent

active

041586131

ABSTRACT:
A method for forming an aluminum interconnect structure on an integrated circuit chip which method employs the anodization of the aluminum but eliminates the necessity for the formation of a hard anodic barrier on the aluminum. Furthermore, the technique provides a superior "cold via" contact. A layer of tantalum is placed over an aluminum layer which tantalum is patterned to define the desired aluminum interconnect structure. Both the exposed aluminum and the tantalum are anodized to form both the interconnect structure and a thin layer of anodic tantalum which is then removed.

REFERENCES:
patent: 3285836 (1966-11-01), Maissel et al.
patent: 3294653 (1966-12-01), Keller et al.
patent: 3741880 (1973-06-01), Shiba et al.
patent: 3864217 (1975-02-01), Takahata et al.
patent: 3939047 (1976-02-01), Tsunemitsu et al.
patent: 4045302 (1977-08-01), Gibbs et al.

Affiliated with

Also associated with

Rating

Method of forming a metal interconnect structure for integrated does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming a metal interconnect structure for integrated , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming a metal interconnect structure for integrated will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-55709