Method of producing a semiconductor device

Details Method of producing a semiconductor device Method of producing a semiconductor device

1979-11-28

1982-03-02

Ozaki, G.

Metal working

Method of mechanical manufacture

Assembling or joining

29576B, 29577C, 148 15, 148187, 357 23, H01L 2128, H01L 2126

Patent

active

043172741

ABSTRACT:
This invention relates to a method of producing a semiconductor device, and more particularly to a method of leading out an electrode for a semiconductor substrate. A conductor layer of polycrystalline silicon or the like is formed on the surface of the semiconductor substrate on which the substrate electrode is to be formed, a desired semiconductor region having a conductivity type opposite to that of the substrate is selectively formed under this state, and the semiconductor substrate electrode is formed on the substrate surface after removing the conductor layer.

REFERENCES:
patent: 3911471 (1975-10-01), Kooi et al.
patent: 4012757 (1977-03-01), Koo
patent: 4033797 (1977-07-01), Dill et al.
patent: 4081896 (1978-04-01), Dingwall
patent: 4240845 (1980-12-01), Esch et al.
patent: 4251571 (1981-02-01), Garbarino et al.
IBM Technical Disclosure Bulletin, vol. 20, No. 11A, Apr. 1978, pp. 4286 and 4287.

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