Insulated gate type semiconductor device

Details Insulated gate type semiconductor device Insulated gate type semiconductor device

1979-03-14

1982-06-08

Edlow, Martin H.

357 22, 357 55, 357 41, H01L 2978

Patent

active

043342353

ABSTRACT:
In an insulated-gate type static induction transistor having a source region for supplying charge carriers, a channel region through which said carriers travel, an insulated electrode type gate structure to which is inputted a gate voltage for controlling the travel of those carriers. A sharp build-up and non-saturating current vs. voltage characteristic, a high transconductance, and a small inter-electrode capacitance for high-speed operation are achieved by either reducing the channel length, or by reducing the depth of the source region smaller than that of the drain region, or by forming adjacent to the source region a blocking region of high impurity concentration relative to the channel region, or by arranging the effective channel close to the insulated gate.

REFERENCES:
patent: 3631310 (1971-12-01), Das
patent: 4070690 (1978-01-01), Wickstrom
patent: 4122544 (1978-10-01), McElroy
patent: 4166223 (1979-08-01), Bluzer
Richman, I.E.E.E. Trans. on Electron Devices, vol. ED.-16, No. 9, pp. 759-766, Sep. 1969.
Sigg et al., I.E.E.E. Trans. on Electron Devices, vol. ED.-19 No. 1, Jan. 1972.

Affiliated with

Also associated with

Rating

Insulated gate type semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Insulated gate type semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Insulated gate type semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-555284