Method for improving reflow of phosphosilicate glass by arsenic

Details Method for improving reflow of phosphosilicate glass by arsenic Method for improving reflow of phosphosilicate glass by arsenic

1983-12-02

1985-08-20

Hearn, Brian E.

Metal working

Method of mechanical manufacture

Assembling or joining

29576B, 29576T, 29590, 148 15, 357 52, 501 63, 427 93, H01L 2195, H01L 21283

Patent

active

045355282

ABSTRACT:
A method of making improved step metal coverage of semiconductor device using enhanced reflow of phosphosilicate glass by ion implantation of arsenic at low temperature is provided. In one embodiment, the fabrication processing includes implanting arsenic into the phosphosilicate glass and reflowing the ion implanted phosphosilicate glass by heating the phosphosilicate glass to smooth the phosphosiliate glass for allowing a metal interconnection.

REFERENCES:
patent: 4319260 (1982-03-01), Tasch, Jr. et al.
patent: 4404733 (1983-09-01), Sasaki
Ahn, J. et al., "Forming Phosphosilicate Glass by Ion Implantation", in IBM Technical Disclosure Bulletin, vol. 13, No. 7, 12-1970, p. 1798.

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