Method of making integrated circuits

Coating processes – Electrical product produced – Integrated circuit – printed circuit – or circuit board

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Details

156653, 427 94, 427 96, 430313, B05D 512, H01L 21306

Patent

active

043339646

ABSTRACT:
A method of reducing lateral field oxidation in the vicinity of the active regions of integrated circuits is described. The method utilizes a three layered masking structure for masking the active regions during field oxidation including a first very thin layer of silicon nitride in contact with the active region of the substrate, a second thin layer of silicon dioxide overlying the very thin layer of silicon nitride, and a third thick layer of silicon nitride overlying the second layer of silicon dioxide.

REFERENCES:
patent: 3675314 (1972-07-01), Levi
patent: 4091169 (1978-05-01), Bohg et al.
patent: 4110125 (1978-08-01), Beyer

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