Semiconductor photoelectron emission device

Details Semiconductor photoelectron emission device Semiconductor photoelectron emission device

1976-01-09

1977-03-29

Edlow, Martin H.

357 30, 357 52, 357 61, H01L 29161, H01L 2714

Patent

active

040152847

ABSTRACT:
Semiconductor photoelectron emission device comprising mixed crystals of two or more different semiconductors forming a heterojunction with direct transition type defining a first region in which may be excited by photoelectrons and an indirect transition type defining a second region whose forbidden band gap is wider than that of the first region and the surface of which is a photoelectron emission surface.

REFERENCES:
patent: 3814996 (1974-06-01), Enstrom
patent: 3900865 (1975-08-01), Schoefer
patent: 3914136 (1975-10-01), Kressel
patent: 3953880 (1976-04-01), Antypas
patent: 3958143 (1976-05-01), Bell
patent: 3972060 (1976-07-01), Hara

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