Integrated IGFET constant current source

Details Integrated IGFET constant current source Integrated IGFET constant current source

1979-05-21

1981-07-28

Dixon, H.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307297, 307304, 323315, H03K 301

Patent

active

042812615

ABSTRACT:
The circuit of the current source comprises two enhancement IGFET pairs connected in series and one enhancement current source IGFET. All of the IGFETs show the same conductivity (p-channel or n-channel) and the two IGFET pairs are connected between the supply voltage and the substrate. The common connection point of the first IGFET pair is connected to the gate electrode of the substrate IGFET of the second IGFET pair and the common connection point of the second IGFET pair is fed to the gate of the current source IGFET.

REFERENCES:
patent: 3832644 (1974-08-01), Nagata et al.
patent: 3875430 (1975-04-01), Prak
patent: 3996482 (1976-12-01), Lockwood
patent: 4016431 (1977-04-01), Henle et al.

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