Semiconductor switch

Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons

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Details

307252A, 307252G, 307252N, 357 38, H03K 1772

Patent

active

040151433

ABSTRACT:
A semiconductor switch large in dv/dt bearing capacity regardless of the anode or cathode potential, high in breakdown voltage, capable of being closed with a small control current, and easy to be included in semiconductor integrated circuits. The semiconductor switch according to the invention comprises a PNPN switch having an equivalent PNPN four-layer construction with three junctions and an active circuit network including at least one transistor. The active circuit network combines with part of a positive feedback loop in the PNPN switch to form a negative feedback circuit network. The transistor forming part of the active circuit network is connected in such a manner as to divide one of the gate currents of the PNPN switch.

REFERENCES:
patent: 3517280 (1970-06-01), Rosier
patent: 3641403 (1972-02-01), Nakata
patent: 3725683 (1973-04-01), Andersen
patent: 3812405 (1974-05-01), Clark

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