Method of making a circular high voltage field effect transistor

Details Method of making a circular high voltage field effect transistor Method of making a circular high voltage field effect transistor

1980-12-11

1982-06-08

Ozaki, G.

Metal working

Method of mechanical manufacture

Assembling or joining

29576B, 148 15, 148187, H01L 2126

Patent

active

043332250

ABSTRACT:
A circular high voltage field effect transistor suitable for inclusion in LSI circuits, and the process for making said transistor, are described. The transistor comprises a central drain and concentric circular field plate, gate and source. Alternate embodiments include an intermediate gate and resistive gate. Implantation and diffusion techniques are described for producing the source and channel regions, and various device dimensions may be varied to improve either current or voltage handling capability or speed capability.

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