Plasma downstream processing

Coating apparatus – Gas or vapor deposition – With treating means

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Details

156345, 20429838, 118723ME, C23C 1600

Patent

active

055627757

ABSTRACT:
An apparatus for performing plasma downstream processing comprises: a microwave introduction chamber defined by a wall having a microwave transmitting window formed of a microwave transmissive material at a part thereof; a plasma generating chamber facing to said microwave introduction chamber through said microwave transmitting window and having a conductive microwave shield disposed generally parallel to said microwave transmitting window, to define a plasma generating space, said microwave shield including a central member which is formed of a continuous conductor and an outer member disposed outside the central member through a gap which has a folded cross sectional shape in a plane including a central normal to the microwave transmitting window; and an evacuatable processing chamber disposed adjacent to said plasma generating chamber through said microwave shield. The gap formed between the central member and the outer member can have a large cross section compared to the conventional through holes in the punching metal. Folded configuration of the gap can prevent direct passing-through of charged particles through microwave shield. A reliable and fast ashing process can be realized.

REFERENCES:
patent: 4718976 (1988-01-01), Fujimura
patent: 4983254 (1991-01-01), Fujimura et al.
patent: 4987284 (1991-01-01), Fujimura et al.
patent: 5024182 (1991-06-01), Kobayashi et al.
patent: 5284544 (1994-02-01), Mizutani et al.
patent: 5480533 (1996-01-01), Yoshida

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