Semiconductor laser diode apparatus and method of producing the

Coherent light generators – Particular active media – Semiconductor

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372 45, 437129, H01S 319

Patent

active

055770622

ABSTRACT:
A semiconductor laser diode apparatus has a substrate of a first conduction type, a first clad layer of the first conduction type which is formed on the substrate, a current block layer which is formed on the first clad layer, a V groove stripe which is formed in a vertical direction so that a tip of the V groove can arrive at the first clad layer in depth, an active layer which is formed on the first clad layer and the current block layer along the V groove stripe without a low resistrance layer, a second clad layer of a second conduction type which is formed on the active layer, a contact layer of the second conduction type which is formed on the second clad layer, a first electrode which is formed on a surface of the substrate which is reverse side of a surface on which the first clad layer is formed and a second electrode which is formed on a surface of the contact layer. Therefore a low threshold current level can be achieved.

REFERENCES:
patent: 4712219 (1987-12-01), Yano et al.
patent: 4829023 (1989-05-01), Nagai et al.
patent: 5114877 (1992-05-01), Paoli et al.
patent: 5173913 (1992-12-01), Kaneno

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