Semiconductor laser device

Details Semiconductor laser device Semiconductor laser device

1990-07-18

1991-09-10

Epps, Georgia

Coherent light generators

Particular active media

Semiconductor

372 46, 357 17, H01S 319

Patent

active

050480375

ABSTRACT:
A visible light semiconductor laser device of an SBA type in which a current blocking layer of a second conductivity type is disposed on a semiconductor substrate of a first conductivity type and a stripe-shaped groove current path is provided in the current blocking layer. A lower cladding structure of the first conductivity type and a GaInP active layer are sequentially epitaxially grown on the current blocking layer and in the stripe-shaped groove. The lower cladding structure includes a first cladding layer of AlGaAs disposed on the current blocking layer and in the stripe-shaped groove and a second cladding layer of AlGaInP which is sufficiently thin not to cause inferior growth of the active layer disposed on the first cladding layer.

REFERENCES:
patent: 4667332 (1987-05-01), Mihashi et al.
patent: 4792960 (1988-12-01), Yamamoto et al.
patent: 4841535 (1989-06-01), Mihashi et al.
Mihashi et al., "A Novel Self-Aligned . . . Mo--CVD", SOlid State Devices and Materials, Tokyo, 6-1985, pp. 63-66.
Mihashi et al., "A Novel Self-Aligned . . . MOCVD", IEDM, Washington, D.C., 12-1985, pp. 646-649.

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