Static information storage and retrieval – Floating gate – Particular biasing
Patent
1995-10-24
1996-11-19
Nguyen, Tan T.
Static information storage and retrieval
Floating gate
Particular biasing
36518518, 36518528, 36518529, G11C 1602
Patent
active
055769950
ABSTRACT:
A method for rewriting a flash memory wherein a plurality of memory cells each of which comprises a pair of source and drain, a floating gate and a control gate are arranged in matrix in a first conductivity-type well formed in a second conductivity-type deep well formed in the first conductivity-type semiconductor substrate; and in which the floating gate is charged with electrons when the flash memory is written and the floating gate is discharged of the electrons when the flash memory is erased; in which the erasure of the flash memory is operated by applying to the first conductivity-type well a first positive voltage different from the potential of the substrate, applying to the source or the drain a second positive voltage higher than the first positive voltage and applying to the control gate a first negative voltage.
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Iguchi Katsuji
Sato Shin'ichi
Nguyen Tan T.
Sharp Kabushiki Kaisha
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