Selective epitaxial growth structure and isolation

Details Selective epitaxial growth structure and isolation Selective epitaxial growth structure and isolation

1987-10-09

1990-03-13

James, Andrew J.

357 55, 357 43, 357 34, H01L 2912

Patent

active

049086910

ABSTRACT:
A novel method of employing selective epitaxial growth, in which interdevice isolation is intrinsically formed. Problems stemming from formation of all active device elements within selective epitaxial growth regions are addressed. Additionally, there is shown a novel transistor array formed according to the method of the invention.

REFERENCES:
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patent: 4764801 (1988-08-01), McLaughlin
IBM Technical Disclosure Bulletin, vol. 22, No. 7, Dec. 1979, pp. 2749-2750, "Self-Aligned Recessed Oxide Isolation Process/Structure to Minimize `Birds's Beak` Formation".
Japanese Patent Abstract, vol. 8, No. 119 (E-248)(1556), Jun. 5, 1984; JP-A-59 33846 & JP-A-59 33847.

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