Semiconductor laser and method for manufacturing the same

Details Semiconductor laser and method for manufacturing the same Semiconductor laser and method for manufacturing the same

1995-12-11

1997-04-01

Bovernick, Rodney B.

Coherent light generators

Particular active media

Semiconductor

257101, 257102, H01S 319

Patent

active

056174381

ABSTRACT:
A semiconductor laser having an oscillation wavelength of not more than 450 nm comprises a substrate, a lower cladding layer containing a III-V Group compound semiconductor as a main component formed on the substrate, an active layer containing the III-V Group compound semiconductor as a main component formed on the lower cladding layer and an upper p-type cladding layer containing III-V Group compound semiconductor as a main component. Mg and Si are contained in the upper p-type cladding layer. A GaN series compound semiconductor is preferably used as the III-V Group compound semiconductor and the upper cladding layer contains preferably not less than 5.times.10.sup.18 /cm.sup.3 of Si.

REFERENCES:
Shen et al., "Rapid Isothermal Processing of Si+ /P+ and Mg+ /P+ Co-Implantations into InP", IEEE Transactions On Electron Devices, vol. 39, No. 1, pp. 209-211.
Shuji Nakamura, et al. "Thermal Annealing Effects On P-Type Mg-Doped GaN Films", Japanese Journal of Applied Physics, vol. 31, 1992, pp. L139-L142. (no month available).
Shuji Nakamura, et al. "Hole Compensation Mechanism Of P-Type GaN Films", Japanese Journal of Applied Physics, vol. 31, 1992, pp. 1258-1266. (no month available).
Shuji Nakamura, et al. "Candela-Class High-Brightness InGaN/AlGaN Double-Heterostructure Blue-Light-Emitting Diodes", Applied Physics Letters, vol. 64, No. 13, Mar. 28, 1994, pp. 1687-1689.

Affiliated with

Also associated with

Rating

Semiconductor laser and method for manufacturing the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor laser and method for manufacturing the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor laser and method for manufacturing the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-545781