Regulation circuit and method for the erasing phase of non-volat

Static information storage and retrieval – Floating gate – Particular biasing

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36518523, 36518526, 36518529, G11C 1602

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active

056173563

ABSTRACT:
A regulating circuit for discharging non-volatile memory cells in an electrically programmable memory device, of the type which comprises at least one switch connected between a programming voltage reference and a line shared by the source terminals of the transistors forming said memory cells, and at least one discharge connection between said common line to the source terminals and a ground voltage reference, further comprises a second connection to ground of the line in which a current generator is connected and a normally open switch. Also provided is a logic circuit connected to the line to compare the voltage value present on the latter with a predetermined value, and to output a control signal for causing the switch to make. This solution allows a slow discharging phase of the line to be effected at the end of the erasing phase.

REFERENCES:
patent: 5051953 (1991-09-01), Kitazawa et al.
IEEE Journal Of Solid-State Circuits, vol. 26, No. 11, Nov. 1991, New York US, pp. 1600-1605, Nakayama et al. "A 60ns 16-Mb Flash EEPROM With Program and Erase Sequence Controller".

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