Solderable front metal contact for MOS devices

Details Solderable front metal contact for MOS devices Solderable front metal contact for MOS devices

Filed on

1990-10-17

Date issued

1991-09-10

Examiner

Hille, Rolf

Other Related Categories

357 67, H01L 2354

Type

Patent

Status

active

Patent number

050478338

Description

ABSTRACT:
A semiconductor device having an MOS-type gate and a main power conduction path through the thickness of the chip has a first main contact on the front surface of the device and a second main contact on the back surface of the device. The contact on the front surface overlies junctions defining the MOSGATE structure and has a solderable electrode. The solderable electrode is enclosed by a dam of amorphous silicon. Solder will not wet amorphous silicon so that the solder is contained within the periphery-defined by the amorphous silicon. The solderable electrode permits heat to be withdrawn from the front surface of the chip and equalizes the current density over all areas underlying the front main contact to prevent hot spots. The solderable contact reduces damage to the cells underlying the front contact as could occur during compression bonding of a lead to a conventional non-solderable aluminum contact.

REFERENCES:
patent: 4593302 (1986-06-01), Lidow et al.
patent: 4635091 (1987-01-01), Roger
patent: 4742380 (1988-05-01), Chang et al.
patent: 4796084 (1989-01-01), Kamasaki et al.

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