Polycide bonding pad structure

Details Polycide bonding pad structure Polycide bonding pad structure

1997-01-28

1998-03-31

Thomas, Tom

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257754, 257756, 257757, 257768, 257770, 257751, H01L 2348, H01L 2944, H01L 2904

Patent

active

057342008

ABSTRACT:
A bonding pad adapted for use with an Aluminum wire that resists stresses that would otherwise peel the pad from the substrate. The pad has a polysilicon layer adhered to an insulating layer on a semiconductor substrate, a overlying refractory metal polycide layer, a second polysilicon layer, a refractory metal layer, and a thick Aluminum alloy bonding pad.

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