Field effect transistor with channel formed on homojunction inte

Details Field effect transistor with channel formed on homojunction inte Field effect transistor with channel formed on homojunction inte

1988-11-16

1991-09-10

James, Andrew J.

357 16, 357 22, 357 58, 357 4, H01L 2948, H01L 2956, H01L 2964, H01L 29161

Patent

active

050478117

ABSTRACT:
An improved field-effect transistor (FET) using compound semiconductors is provided. The improved FET includes a reverse-conduction type semiconductor layer formed on a one-conduction type semiconductor layer. The reverse-conduction type semiconductor layer has a thickness smaller than that of the one-conduction type semiconductor layer and an impurity concentration lower than that of the same. The FET further includes an intrinsic semiconductor layer formed on the reverse conduction type semiconductor layer, and a Schottky junction gate electrode formed on the intrinsic semiconductor layer. The FET also includes a channel constituted by a potential well developed at the interface between the intrinsic semiconductor layer and the reverse-conduction type semiconductor layer.

REFERENCES:
patent: 4593301 (1986-06-01), Inata et al.
patent: 4605945 (1986-08-01), Katayama et al.
patent: 4616242 (1986-10-01), Solomon et al.
patent: 4727403 (1988-02-01), Hida et al.
patent: 4799088 (1989-01-01), Hiyamizu et al.
Kato et al., 6-7 GHz GaAs IC's with High Yield 0.5 m Gate-Length Saint, Extended Abstracts of 17th Conference on Solid State Devices and Materials, Tokyo, 1985, pp. 417-420.
Circillo et al., Inverted GaAs/AlGaAs Modulation-Doped Field-Effect Transistors with Extremely High Transconductances, IEEE Electron Device Letters, vol. Ed-7, No. 2, Feb. 1986, pp. 71-74.

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