Stacked silicide/silicon mid- to long-wavelength infrared detect

Details Stacked silicide/silicon mid- to long-wavelength infrared detect Stacked silicide/silicon mid- to long-wavelength infrared detect

1988-08-01

1990-03-13

James, Andrew J.

357 4, 357 15, 357 67, H01L 2948, H01L 3110, H01L 2714

Patent

active

049086863

ABSTRACT:
The use of stacked Schottky barriers (16) with epitaxially grown thin silicides (10) combined with selective doping (22) of the barriers provides high quantum efficiency infrared detectors (30) at longer wavelengths that is compatible with existing silicon VLSI technology.

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patent: 4742017 (1988-05-01), Bredthauer
patent: 4794438 (1988-12-01), Levinson et al.
Dohler, Scientific American, Nov. 1983 pp. 144-151, "Semiconductor Superlattices".
Dalal, Jour. of Appl. Phys. vol. 42 No. 3 May 1971, pp. 2274-2279 "Simple Model for Internal Photoemission".

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