MOS-controlled power semiconductor component for high voltages

Details MOS-controlled power semiconductor component for high voltages MOS-controlled power semiconductor component for high voltages

1995-05-26

1997-04-01

Brown, Peter Toby

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Combined with field effect transistor

257147, 257153, 257341, H01L 29739, H01L 29744, H01L 29768, H01L 2941

Patent

active

056169388

ABSTRACT:
In an MOS-controlled power semiconductor component having a multiplicity of cathode cells, the surface area proportion of the cathode cells relative to the total component surface area is selected at between 0.1% and 10% in the case of circular cell geometry and between 0.4% and 40% in the case of strip-shaped cell geometry. As a result of this, the susceptibility to oscillation caused by small inductances can be reduced. (FIG. 1)

REFERENCES:
patent: 5285094 (1994-02-01), Mori et al.
patent: 5289981 (1994-03-01), Kamiwano et al.
F. Bauer, "The MOS Controlled Thyristor And Its Limits", Power Semiconductor Devices & Circuits, (1992), pp. 31-61.
J. Baliga, "Evolution of MOS-Biplor. . . Technology", Proceedings Of The IEEE, vol. 76, No. 4, Apr. 1988, pp. 409-418.
T. Laska et al., "A 2000 V Non-Punchthrough. . . Ruggedness", Solid-State Elec., vol. 35, No. 5, pp. 681-685, 1992.
A. Hefner, Jr., "A Performance Trade-Off. . . Reduction" IEEE Trans. On Power Elec., vol. PE-2, No. 3, Jul. 1987, 194-207.
Dr. Dah Wen Tsang, "A Single Critical Mask. . . Power Transistors" EPE Journal, vol. 2, No. 2, Jun. 1992, pp. 95-100.

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