Semiconductor device manufacturing: process – Electron emitter manufacture
Patent
1994-05-12
2000-07-11
Bowers, Charles
Semiconductor device manufacturing: process
Electron emitter manufacture
H01L 2100
Patent
active
060871938
ABSTRACT:
A non-power generating current limiting device such as a field effect transistor is provided to output a regulated current in dependence upon a control voltage. An electron field emitter is connected to a drain or output of the non-power generating current limiting device to receive the regulated current. A tip of the electron field emitter emits electrons towards a collector anode. An extractor gate can be provided between the electron field emitter and the collector anode to control the rate of electron emission from the electron field emitter. Because the non-power generating current limiting device regulates the current to the electron field emitter, a maximum current output of the electron field emitter is limited to the regulated current from the voltage controlled current source. The electron field emitter is thus protected from destruction due to excess current. The non-power generating current limiting device can also be used to modulate electron emission from the field emitter.
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Bowers Charles
Stockstill Charles J.
Sulsky Martin
The United States of America as represented by the Secretary of
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