Fishing – trapping – and vermin destroying
Patent
1990-10-15
1992-01-14
Hearn, Brian E.
Fishing, trapping, and vermin destroying
437 21, 437 84, 437106, 437132, 148DIG113, 148DIG149, H01L 21335, H01L 2120
Patent
active
050810537
ABSTRACT:
A method for forming a transistor which may be suitable for high temperature application is provided. A single crystal silicon substrate has an overlaying layer of epitaxially grown cubic boron nitride in crystallographic registry with the silicon substrate. The cubic boron nitride is epitaxially grown using laser ablation techniques and provides an electrically resistive and thermally conductive barrier. An active layer of epitaxial silicon is then grown from the layer of cubic boron nitride, such that the overlaying layer of epitaxial silicon is in crystallographic registry with the layer of boron nitride which is in crystallographic registry with the underlying silicon substrate. Appropriately doped source and drain regions and a gate electrode are provided to form the transistor. A clean crystallographic lattice match between the cubic boron nitride and surrounding silicon is obtained, thereby minimizing any stresses due to a mismatch in lattice constants and permitting the overlaying silicon active layer to be extremely thin.
REFERENCES:
G. L. Doll et al., "The Growth and Characterization of Epitaxial Cubic Boron Nitride Films on Silicon"; submitted to Physical Rev. Lett. 25 Oct. 1990.
G. L. Doll et al., "Laser Deposition of Cubic Boron Nitride Films on Silicon", 2nd National Conf. on the New Diamond Science and Technology, Sep. 23-27, 1990, Washington, D.C.
G. L. Doll et al., "Laser Deposited Cubic Boron Nitride Films", Mat. Res. Sym. Spring Meeting, Apr. 1990, San Francisco, Calif.
A. R. Badzian, "Cubic Boron Nitride--Diamond Mixed Crystals", Mat. Res. Bull., vol. 16, pp. 1385-1393, (1981).
G. Kessler et al., "Laser Pulse Vapour Deposition of Polycrystalline Wurtzite-type BN", Thin Solid Films, vol. 147, pp. L45-L50 (1987).
P. T. Murray et al., "Growth of Stoichiometric BN Films by Pulsed Laser Evaporation", Mat. Res. Soc. Symp. Proc., vol. 128, pp. 469-474 (1989).
G. L. Doll et al., "X-Ray Diffraction Study of Cubic Boron Nitride Films Grown Epitaxially on Silicon", Mat. Res. Soc., Boston, Mass. (1990), Fall Meeting.
E. G. Bauer et al. J. Mat. Res, vol. 5, No. 4, Apr. 1990, pp. 852-895, "Fundamental Issues in Heteroepitaxy".
S. Koizumi et al., Appl. Phys. Lett. 57(6), 6 Aug. 1990, pp. 563-565, "Epitaxial Growth of Diamond Thin Films on Cubic Boron Nitride . . . ".
S. P. S. Arya et al., Thin Solid Films 157 (1988), pp. 267-282, "Preparation, Properties and Applications of Boron Nitride Thin Films".
H. Sankur et al., Appl. Phys. A 47, 271 (1988), "Formation of Dielectric and Semiconductor Thin Films by Laser Assisted Evaporation".
B. E. Williams et al., J. Mat. Res. 4, 373 (1989), "Characterization of Diamond Thin Films".
J. S. Speck et al., J. Mat. Res. 5, 980 (1990), "Microstructural Studies of Laser Irradiated Graphite Surface".
S. V. Gaponov et al., Sov. Tech. Phys., 27/(9), Sep. 1982, pp. 1130-1133, "Processes Occuring in an Erosion Plasima During Laser . . . ".
S. J. Thomas et al., Appl. Phys. Lett. 40, 200 (1982), "Observation of the Morphology of Laser-Induced Damage in Copper Mirrors".
J. E. Rothenberg et al., Nucl. Instr. and Meth. B1 (1984), 291-300, "Laser Sputtering, Part II, The Mechanism of the Sputtering of Al.sub.2 O.sub.3 ".
B. D. Cullity, "Elements of X-ray Diffraction", 2nd Edition, (Addison-Wesley, Reading, Mass., 1978), p. 142.
R. N. Sheftal et al., Crys. Res. Tech., 16(8) 1981, pp. 887-891, "Mechanism of Condensation of Heteroepitaxial A.sup.3 B.sup.5 Layers . . . ".
G. L. Doll et al., "Effect of Excimer Laser Ablation on the Surfaces of Hexagonal Boron Nitride Targets", Mat. Res. Soc., Boston, Mass (1990), Fall Meeting.
D. Dijkkamp et al., App. Phys. Lett. 24 Aug. 1987, pp. 619-621, "Preparation of Y-Ba-Cu Oxide Superconductor Thin Films . . . ".
Q. Y. Ying et al., Appl. Phys. Lett. 55(10), 4 Sep. 1989, pp. 1046-1043, "Nature of In-situ Superconducting Film Formation".
J. T. Cheung et al., CRC Critical Reviews in Solid State and Materials Sciences, vol. 15, Issue 1, 1988, pp. 63-109, "Growth of Thin Films by Laser-Induced Evaporation".
J. P. Rebouillat et al., "Proceedings of the Materials Research Society, vol. 151, 1989, pp. 259-264, Laser Ablation Deposition (LAD) of Metallic Thin Films".
H. Schwartz et al., J. Vac. Sci. Techn, vol. 6, No. 3, 1969, "Vacuum Deposition by High Energy Laser with Emphasis on Boron Titanate Films".
S. G. Hansen et al., Appl. Phys. Lett. 52(1), 4 Jan. 1988, pp. 81-83, "Formation of Polymer Films by Pulsed Laser Evaporation".
R. J. Nemanich et al., Phys. Rev. B, vol. 23, No. 12, 15 Jun. 1981, "Light Scattering Study of Boron Nitride Microcrystals".
Doll Gary L.
Heremans Joseph P.
Sell Jeffrey A.
Brooks Cary W.
General Motors Corporation
Hearn Brian E.
Quach T. N.
LandOfFree
Method for forming a transistor having cubic boron nitride layer does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for forming a transistor having cubic boron nitride layer, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for forming a transistor having cubic boron nitride layer will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-541195