ROM and process for producing the same

Details ROM and process for producing the same ROM and process for producing the same

1989-06-28

1992-01-14

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 44, 437 45, 357 2312, H01L 21265

Patent

active

050810529

ABSTRACT:
MISFET's are formed in the depletion mode in advance in a process comprising blanket implantation of the region in which memory cells are to be formed. MISFET's which are selected from these depletion-mode MISFET's are then formed into enhancement-mode or weak depletion-mode MISFET's to thereby write desired data into the memory cells of a read-only memory. The change of the MISFET's from the depletion mode into the enhancement mode (or weak depletion mode) is effected by introducing an impurity into the channel regions of the selected MISFET's in a manufacturing step that is carried out after the formation of the gate electrodes of the MISFET's.

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Tsang, P., et al, "Fabrication of High Performance LDDFET's with Oxide Sidewall-Spacer Technology", IEEE Transactions on Electron Devices, vol. ED-29, No. 4, 4/82.

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