Method for making a metal to metal capacitor

Details Method for making a metal to metal capacitor Method for making a metal to metal capacitor

1994-12-09

1996-11-19

Tsai, H. Jey

Fishing, trapping, and vermin destroying

437919, 148DIG14, H01L 2170, H01L 2700

Patent

active

055762409

ABSTRACT:
A method for making a metal-to-metal capacitor for an integrated circuit includes forming a layer of titanium/titanium nitride on a polysilicon which has been patterned with interlevel dielectrics. A capacitor dielectric is then deposited, followed by patterning with photoresist to delineate the capacitor, etching to remove extraneous dielectric, deposition of aluminum, further patterning and etching to define the capacitor and access area, and removal of photoresist.

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