Fishing – trapping – and vermin destroying
Patent
1995-10-17
1996-11-19
Chaudhari, Chandra
Fishing, trapping, and vermin destroying
437 31, 437 60, 148DIG124, H01L 218222
Patent
active
055762379
ABSTRACT:
A capacitor coupled contactless imager structure and a method of manufacturing the structure results in a phototransistor that structure includes an N-type collector region formed in P-type semiconductor material. A P-type base region is formed in the collector region. An n-doped polysilicon emitter contact is formed in contact with the surface of the P-type base region such that an n+ epitaxial region is formed in the base region as the emitter of the phototransistor. Silicon dioxide separates the poly1 emitter content and exposed surfaces at the base region from a layer of poly2 about 3000-4000 .ANG. thick that partially covers the base region; the gates of the CMOS peripheral devices are also poly2. The poly2 over the base region serves as a base coupling capacitor and a row conductor for the imager structure. The thickness of the poly2 capacitor plate allows it to be doped utilizing conventional techniques and silicided to improve the RC constant.
REFERENCES:
patent: 5089425 (1992-02-01), Hoshi et al.
patent: 5286991 (1994-02-01), Hui et al.
patent: 5288651 (1994-02-01), Nakazawa
patent: 5336632 (1994-08-01), Imamura
Bergemont Albert
Chi Min-hwa
Haggag Hosam
Mead Carver A.
Chaudhari Chandra
National Semiconductor Corporation
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