Process for fabricating an insulated gate field effect transisto

Details Process for fabricating an insulated gate field effect transisto Process for fabricating an insulated gate field effect transisto

1995-06-02

1996-11-19

Wilczewski, Mary

Fishing, trapping, and vermin destroying

437 21, 437186, 437238, 437239, H01L 21336

Patent

active

055762310

ABSTRACT:
A thin film transistor comprising a gate electrode offset from source and drain, which comprises a substrate having thereon a gate electrode fabricated on an active region provided on the substrate, wherein, an anodic oxide of the material constituting the gate electrode is provided on the side and the upper face of said gate electrode, and the anodic oxide on the side of the gate electrode is formed thicker than the anodic oxide formed on the upper face. Also claimed is a process for fabricating the above thin film transistor improved in device characteristics and product yield, which comprises forming a gate electrode with an anodically oxidizable material having thereon a masking material, providing a relatively thick porous anodic oxide film on the side of the gate electrode by anodic oxidation effected under a relatively low voltage, then forming a dense anodic oxide film on at least the upper face of the gate electrode after removing the masking material, and introducing impurities into the semiconductor layer using the gate electrode portion having thereon the anodic oxide films as a mask.

REFERENCES:
patent: 3806778 (1974-04-01), Shimakura et al.
patent: 4742025 (1988-05-01), Ohyu et al.
patent: 5289030 (1994-02-01), Yamazaki et al.
patent: 5308998 (1994-05-01), Yamazaki et al.
patent: 5403762 (1995-04-01), Takemura

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