Method of fabricating a thin-film transistor and liquid-crystal

Details Method of fabricating a thin-film transistor and liquid-crystal Method of fabricating a thin-film transistor and liquid-crystal

1995-05-31

1996-11-19

Chaudhari, Chandra

Fishing, trapping, and vermin destroying

437 24, 437933, H01L 21266

Patent

active

055762298

ABSTRACT:
A method of fabricating a thin-film transistor, includes the step of forming a source region and a drain region in a semiconductor thin film having a capping film thereon, by accelerating a plasma source including hydrogen ions and one of Group III ions and Group V ions of the Periodic table, and simultaneously implanting the hydrogen ions and one of the Group III ions and the Group V ions into the semiconductor thin film, wherein there exist a plurality of peaks in a depth profile of a concentration of the hydrogen ions implanted into the semiconductor thin film having the capping film thereon and a second peak from a surface of the capping film among the plurality of the peaks is made to exist in the semiconductor thin film.

REFERENCES:
patent: 5250446 (1993-10-01), Osawa et al.
patent: 5403756 (1995-04-01), Yoshinouchi et al.
patent: 5504020 (1996-04-01), Aomori et al.

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