Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask
Patent
1998-04-15
2000-07-11
Rosasco, S.
Radiation imagery chemistry: process, composition, or product th
Radiation modifying product or process of making
Radiation mask
430296, G03F 900
Patent
active
06087046&
ABSTRACT:
Methods are disclosed for forming microlithography (photolithography or charged-particle-beam projection lithography) masks exhibiting reduced proximity effects. A first exposure is made, using an electron beam at a first exposure intensity level, on a mask substrate. The first exposure is made on region(s) of the mask substrate corresponding to the desired basic feature(s) of the mask pattern. A second exposure is made, using, the electron beam at a second exposure intensity level, at "secondary exposure regions" that at least partially reside within the basic feature(s). Thus, portions of the basic features receive a cumulative electron exposure that is greater than other portions of the basic features. Such increased cumulative exposure causes an alteration of the profile of the subject basic feature sufficient to cause the resulting modified basic feature to exhibit a reduced proximity effect. The secondary exposure areas are preferably square and/or rectangular, extending along one or more edges of the subject basic feature, and can overlap or not overlap the corresponding edge(s) of the basic feature. The width and exposure intensity levels for the secondary exposure areas are controlled to produce a mask pattern area with widened and outgrown areas of the basic features that compensate for the proximity effect.
REFERENCES:
patent: 5792581 (1998-08-01), Ohnuma
patent: 5804339 (1998-09-01), Kim
Abe et al., "Representative Figure Method for Proximity Effect Correction [II]," Jpn. J. Appl. Phys. 30:2965-2969 (1991).
Parikh, "Corrections to Proximity Effects in Electron Beam Lithography. I. Theory," J. Appl. Phys. 50:4371-4377 (1979).
Nikon Corporation
Rosasco S.
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