Semiconductor integrated circuit

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357 68, 357 55, H01L 2980, H01L 2348, H01L 2906

Patent

active

049086804

ABSTRACT:
A semiconductor integrated circuit device includes a plurality of transistors each comprising a source region, a drain region, and a gate region, the source regions of the transistors are commonly connected to each other via via-holes produced through the semiconductor substrate at positions corresponding to the source regions, the gate regions of the transistors are commonly connected to each other on the semiconductor substrate, and the via-holes of the semiconductor substrate are arranged dispersively in two-dimensional direction in the surface of the semiconductor substrate.

REFERENCES:
patent: 3969745 (1976-07-01), Blocker, III
patent: 4313126 (1982-01-01), Krumm et al.
Pauley et al., "A2 to 40 GHz Monolithic Distributed Amplifier", 1985 IEEE, pp. 15-17.
Emori et al., "A2 to 20 GHz Monolithic Distributed Amplifier", pp. 29-34.

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