Integrated circuit having a lateral multicollector transistor

Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Lateral bipolar transistor structure

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

257593, 257558, 257592, H01L 2972, H01L 2906, H01L 2348

Patent

active

052008037

ABSTRACT:
An integrated circuit includes a lateral transistor which has emitter regions (7) and collector regions (8) of a first conductivity type laterally spaced apart and included in a region (4, 5) of a second conductivity type opposed to the first. The lateral space (4) of the region (4, 5) of the second type situated between the emitter (7) and collector (8) regions forms the base of the transistor, with the emitter region (7) having a depth and a doping level which are such that the diffusion length of the minority carriers injected vertically therein is greater than or equal to the width of the region, which region has an elongate shape in at least a longitudinal direction, while the lateral transistor has its contour surrounded by a deep insulating layer (12). The collector (8) has at least two zones, between which is disposed an elongate portion (7) of the emitter region, with an additional region (9) of the first conductivity type adjoining the contour of the transistor and disposed between the contour of the transistor and the deep insulating layer (12) at least opposite to the ends (7') of the elongate portion of the emitter region.

REFERENCES:
patent: 4684877 (1987-09-01), Shreve et al.
patent: 4951108 (1990-09-01), Leduc
Berger et al; "Current Gain In Injection Transistor Structures"; May 1975; IBM Technical Disclosure Bulletin vol. 17. No. 12.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Integrated circuit having a lateral multicollector transistor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Integrated circuit having a lateral multicollector transistor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Integrated circuit having a lateral multicollector transistor will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-540264

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.