Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Patent
1996-10-03
1998-05-05
Powell, William
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
H01L 2100
Patent
active
057473862
ABSTRACT:
A rotary coupling for use in an apparatus for chemical mechanical planarization of material substrates. The coupling has a housing defining a chamber therein. A housing passage is formed through the housing and communicates with the chamber and a fluid source. A rotary shaft is connected at one end to the apparatus and has at an opposite end a coupling end extending into the chamber. A shaft passage is formed longitudinally through the shaft which opens into the coupling end and communicates with the apparatus at its other end. A coupling interface is defined within the chamber of the housing for abutting against the shaft coupling end. The coupling end and coupling interface are biased against one another. The shaft passage and housing passage in combination define a portion of a continuous fluid process line between the apparatus and the fluid source.
REFERENCES:
patent: 4194324 (1980-03-01), Bonora et al.
patent: 4716961 (1988-01-01), Makins, Jr. et al.
patent: 4974370 (1990-12-01), Gosis
patent: 5443416 (1995-08-01), Volodarsky et al.
patent: 5514245 (1996-05-01), Doan et al.
patent: 5527209 (1996-06-01), Volodarskey et al.
patent: 5593537 (1997-01-01), Cofe et al.
Micro)n Technology, Inc.
Powell William
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