Method for controlling plasma etching rates

Details Method for controlling plasma etching rates Method for controlling plasma etching rates

1978-06-13

1980-09-16

Mack, John H.

Chemistry: electrical and wave energy

Processes and products

Vacuum arc discharge coating

204298, 156643, C23F 100

Patent

active

042228387

ABSTRACT:
In a preferred embodiment, the etch rate of a silicon-containing surface subjected to a RF discharge plasma containing reactive etching species is selectively affected by electrically insulating the surface from the plasma-generating RF power source and by applying to the surface a predetermined time-constant electrical potential. The applied potential apparently interacts with the plasma constituents in the immediate vicinity of the surface to alter the concentration of reactive species and thereby change the rate of attack of the plasma upon the surface. The applied potential, depending upon its polarity and strength, is useful to selectively increase or decrease the etch rate of the desired surface exposed to a predetermined plasma without significantly interfering with the overall RF plasma discharge.

REFERENCES:
patent: 3544445 (1970-12-01), Moseson
patent: 3940506 (1976-02-01), Heinecke
patent: 3971684 (1976-07-01), Muto
patent: 4057460 (1977-11-01), Saxena
patent: 4134817 (1979-01-01), Bourdon
S. Matsuo and Y. Takehara, Preferential SiO.sub.2 Etching on Si Substrate . . . , Japan J. Appl. Phys., vol. 16, (1977), No. 1, pp. 175-176.
John Hollahan et al., Plasma-Enhanced Chemical Vapor Deposition of Thin Films . . . , Applied Materials, Inc., Santa Clara, Calif. 95051.
P. D. Davidse, Theory and Practice of RF Sputtering, Vacuum, vol. 17, No. 3, pp. 139-145.
IBM Tech Disc Bulletin, vol. 10, No. 4, Sep. 1967, Cuomo et al., Substrate Cleaning by Low-Energy Bombardment.
IBM Tech Disc Bulletin, vol. 20, No. 1, Jun. 1977, Coburn, Enhancing the Fragmentation of Molecular Species in a Plasma Etching Discharge.
Bersin, A Survey of Plasma-Etching Processes, Solid State Technology, vol. 19, No. 5, pp. 31-36, May 1976.
IBM Tech Disc Bulletin, vol. 8, No. 8, Jan. 1966, Davidse, Masking Technique for Cathodic Sputter Etching.

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