Process for preparing a semiconductor device using hydrogen fluo

Details Process for preparing a semiconductor device using hydrogen fluo Process for preparing a semiconductor device using hydrogen fluo

1991-10-08

1993-04-06

Maples, John S.

Fishing, trapping, and vermin destroying

437228, 156646, 156667, H01L 2144, H01L 21465

Patent

active

052003612

ABSTRACT:
A process for preparing a semiconductor device includes the steps of forming a lower wiring of aluminum or an aluminum alloy on a semiconductor substrate, coating said lower wiring with an interlayer dielectric film, forming via-holes in said interlayer dielectric film through a patterned resist by a reactive ion etching method, removing deposits produced by said method in said via-holes and a portion of said interlayer dielectric film around said deposits by means of hydrogen fluoride gas and nitrogen gas in the presence or absence of water vapor, and then forming an upper wiring on said interlayer dielectric film.

REFERENCES:
patent: 4605479 (1986-08-01), Faith, Jr.
patent: 4857142 (1989-08-01), Syverson
van der Heide, et al. "Etching of Thin SiO.sub.2 Layers Using Wet HF Gas", J. Vac. Sci. Tech., A7 (3), May/Jun. 1990 pp. 1719-1723.
Burggraf, editor, "Vapor Phase Cleaning at Reduced Pressure", Semiconductor International, Dec. 1989 p. 36.

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