Method for improving the radiation hardness of an integrated cir

Details Method for improving the radiation hardness of an integrated cir Method for improving the radiation hardness of an integrated cir

1991-02-14

1993-04-06

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 32, 437225, 437228, 437 34, 148DIG11, 148DIG50, H01L 21265

Patent

active

052003477

ABSTRACT:
A method is provided for use with an integrated circuit which includes a npn bipolar transistor on which a variable thickness oxide layer has been formed, the method for improving the radiation hardness of the transistor comprising the steps of: removing the variable thickness oxide layer; and forming a new oxide layer on the transistor, the new oxide layer having less overall volume than the removed variable thickness oxide layer.

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